Ph.D. student, Sheriff Sadiqbatch's TCAD paper on the novel EM acceleration technique has been accepted. The work represents a novel reservior-sink based EM acceleration technique, which can allow the EM acceleration without leading to other long-term relibility effects such as TDDB, HCI etc. The paper informaiton is as follows: S. Sadiqbatcha, Z. Sun and S. X.-D. Tan, “Accelerating electromigration aging: fast failure detection for nanometer ICs”, IEEE Transaction on Computer-Aided Design of Integrated Circuits and Systems(TCAD), (accepted). DOI: 10.1109/TCAD.2019.2907908